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Morphological, structural, and photoelectrochemical characterization of n-type Cu2O thin films obtained by electrodeposition

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Autor dc.contributor.author Grez P.
Autor dc.contributor.author Herrera F.
Autor dc.contributor.author Riveros G.
Autor dc.contributor.author Ramirez A.
Autor dc.contributor.author Henriquez R.
Autor dc.contributor.author Dalchiele E.
Autor dc.contributor.author Schrebler R.
Fecha Ingreso dc.date.accessioned 2014-04-05T00:17:53Z
Fecha Disponible dc.date.available 2014-04-05T00:17:53Z
Fecha en Repositorio dc.date.issued 2014-04-04
dc.identifier 10.1002/pssa.201228286
dc.description.abstract Thin films of copper(I) oxide (Cu2O) were electrodeposited on fluorine-doped tin oxide predeposited glass substrates, by reduction of Cu 2+ from Cu(II) acetate acid aqueous solutions. The Cu2O was potentiostatically grown at a potential value of -0.450V (vs. SMSE) at 70°C. The Cu2O thin films were characterized by means of scanning electron microscopy, X-ray diffraction, X-ray photoelectron spectroscopy (XPS), optical transmission, electrochemical impedance spectroscopy, and photoelectrochemical experiments. Through these techniques, it was possible to establish the cubic Cu2O phase with a high crystallinity and a strong preferential growth along the [200] and [220] directions. Cu2O thin films show oxygen vacancies with formation of a nonstoichiometric compound with the presence of Cu(0) in the crystal lattice as determined by XPS analysis. In addition, Cu2O was used as the photoanode for the I- oxidation reaction when the system was illuminated (Φ0=50. 0mWcm-2). The films exhibited a clear n-type semiconductor behavior, which was in agreement with the Mott-Schottky results. This behavior was explained by considering the nonstoichiometry of the oxide. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. en_US
dc.source Physica Status Solidi (A) Applications and Materials Science
Link Descarga dc.source.uri http://www.scopus.com/inward/record.url?eid=2-s2.0-84871219547&partnerID=40&md5=bfbd72d24e03afcb8f24aa4dff7dbe6d
Title dc.title Morphological, structural, and photoelectrochemical characterization of n-type Cu2O thin films obtained by electrodeposition en_US
Tipo dc.type Article
dc.description.keywords Fluorine doped tin oxide; Glass substrates; High crystallinity; Mott-Schottky; N-type semiconductors; Non-stoichiometric compounds; Non-stoichiometry; Oxidation reactions; Photoanode; Photoelectrochemical characterization; Photoelectrochemical properties; Photoelectrochemicals; Potential values; Preferential growth; XPS analysis; Electrochemical impedance spectroscopy; Electrochemistry; Electrodeposition; Nanocomposites; Photoelectrons; Scanning electron microscopy; Substrates; Tin; Tin oxides; X ray diffraction; X ray photoelectron spectroscopy; Thin films en_US


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