Autor |
dc.contributor.author |
Cabello G. |
|
Autor |
dc.contributor.author |
Lillo L. |
|
Autor |
dc.contributor.author |
Buono-Core G.E. |
|
Fecha Ingreso |
dc.date.accessioned |
2014-04-05T00:13:03Z |
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Fecha Disponible |
dc.date.available |
2014-04-05T00:13:03Z |
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Fecha en Repositorio |
dc.date.issued |
2014-04-04 |
|
|
dc.identifier |
10.1016/j.jnoncrysol.2007.08.014 |
|
|
dc.description.abstract |
In this paper amorphous ZrO2 and HfO2 thin films were obtained by direct UV irradiation of Zr(IV) and Hf(IV) β-diketonate precursor complexes on Si(1 0 0) and fused silica substrates. The precursors, Zr(CH3COCHCOCH3)4 and Hf(C6H5COCHCOCH3)4 were deposited as amorphous thin films by spin coating. The photochemistry of these films was monitored by FT-IR spectroscopy. The photolysis with 254 nm light led to the loss of the ligands from the coordination complexes, and the production of metallic oxides. The thin films products were characterized by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). These analyses revealed that as-deposited films are amorphous and that the presence of carbon is thought to arise from the ligands. However, post-annealing of the photodeposited films favors the stoichiometric and optical properties of ZrO2 and HfO2 thin films. © 2007 Elsevier B.V. All rights reserved. |
en_US |
|
dc.source |
Journal of Non-Crystalline Solids |
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Link Descarga |
dc.source.uri |
http://www.scopus.com/inward/record.url?eid=2-s2.0-37349087526&partnerID=40&md5=540fc34c2c92239d510de5a110807adc |
|
Title |
dc.title |
Zr(IV) and Hf(IV) β-diketonate complexes as precursors for the photochemical deposition of ZrO2 and HfO2 thin films |
en_US |
Tipo |
dc.type |
Article |
|
|
dc.description.keywords |
Amorphous semiconductors; Atomic force microscopy; Chemical vapor deposition; Electrochemical properties; Scanning tunneling microscopy; Sensors; X ray diffraction; X ray photoelectron spectroscopy; Zirconia; Amorphous thin films; Photochemical depositions; Scattering measurements; Thin films |
en_US |